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d a t a sh eet product speci?cation supersedes data of 1995 nov 27 file under integrated circuits, ic03 1996 jan 15 integrated circuits uaa2080 advanced pager receiver
1996 jan 15 2 philips semiconductors product speci?cation advanced pager receiver uaa2080 features wide frequency range: vhf, uhf and 900 mhz bands high sensitivity high dynamic range electronically adjustable filters on chip suitable for data rates up to 2400 bits/s wide frequency offset and deviation range fully pocsag compatible fsk receiver power on/off mode selectable by the chip enable input low supply voltage; low power consumption high integration level interfaces directly to the pca5000a, pcf5001 and pcd5003 pocsag decoders. applications wide area paging on-site paging telemetry rf security systems low bit-rate wireless data links. general description the uaa2080 is a high-performance low-power radio receiver circuit primarily intended for vhf, uhf and 900 mhz pager receivers for wide area digital paging systems, employing direct fm non-return-to-zero (nrz) frequency shift keying (fsk). the receiver design is based on the direct conversion principle where the input signal is mixed directly down to the baseband by a local oscillator on the signal frequency. two complete signal paths with signals of 90 phase difference are required to demodulate the signal. all channel selectivity is provided by the built-in if filters. the circuit makes extensive use of on-chip capacitors to minimize the number of external components. the uaa2080 was designed to operate together with the pca5000a, pcf5001 or pcd5003 pocsag decoders, which contain a digital input filter for optimum call success rate. ordering information type number package name description version uaa2080h lqfp32 plastic low pro?le quad ?at package; 32 leads; body 7 7 1.4 mm sot358-1 uaa2080t so28 plastic small outline package; 28 leads; body width 7.5 mm sot136-1 uaa2080u 28 pads naked die; see fig.9
1996 jan 15 3 philips semiconductors product speci?cation advanced pager receiver uaa2080 quick reference data symbol parameter conditions min. typ. max. unit v p supply voltage 1.9 2.05 3.5 v i p supply current 2.3 2.7 3.2 ma i p(off) stand-by current -- 3 m a p i(ref) rf input sensitivity ber 3 100 ; 4 khz deviation; data rate 1200 bits/s; t amb =25 c f i(rf) = 173 mhz -- 126.5 - 123.5 dbm f i(rf) = 470 mhz -- 124.5 - 121.5 dbm f i(rf) = 930 mhz -- 120.0 - 114.0 dbm p i(mix) mixer input sensitivity ber 3 100 ; f i(rf) = 470 mhz; 4 khz deviation; data rate 1200 bits/s; t amb =25 c -- 115.0 - 110.0 dbm v th detection threshold for battery low indicator 1.95 2.05 2.15 v t amb operating ambient temperature - 10 - +70 c
1996 jan 15 4 philips semiconductors product speci?cation advanced pager receiver uaa2080 block and test diagrams (173 mhz) handbook, full pagewidth mlc700 active filter gyrator filter active filter gyrator filter low noise amplifier q low noise amplifier i 15 16 18 19 rf pre-amplifier 11 r1 10 8 c3 5 to 20 pf l1 43 nh c2 8.2 pf c1 8.2 pf band gap reference if testpoints tpi tpq 5 6 7 gnd1 l3 22 nh l2 22 nh 12 c4 1 nf c5 1 nf c10 22 pf c11 22 pf c7 8.2 pf c6 5 to 20 pf c8 8.2 pf c9 8.2 pf l4 150 nh l5 150 nh 13 14 crystal oscillator frequency multiplier v ref bli re to decoder 3 2 1 ts c18 1 nf r5 1.8 k w l9 560 nh c16 13 to 50 pf xtal c17 15 pf c14 1 nf v p v p c13 10 m f r7 100 w 26 27 tdc 28 c15 27 pf l8 27 nh gnd3 30 31 32 r4 2.2 k w c19 1 nf uaa2080h 24 25 c12 5 to 20 pf l7 33 nh l6 33 nh r3 1.5 k w r2 47 k w 22 21 20 gnd2 battery low indicator limiter q demo- dulator limiter i do mixer i mixer q v p 4 330 w v i(rf) v p fig.1 block, test and application diagram drawn for lqfp32; f i(rf) = 172.941 mhz. pins 9, 17, 23 and 29 are not connected.
1996 jan 15 5 philips semiconductors product speci?cation advanced pager receiver uaa2080 handbook, full pagewidth mlc701 active filter gyrator filter active filter gyrator filter low noise amplifier q low noise amplifier i 10 11 12 13 14 limiter q demodulator limiter i rf pre-amplifier 6 330 w r1 5 4 c3 5 to 20 pf l1 43 nh c2 8.2 pf c1 8.2 pf band gap reference if testpoints tpi tpq 12 3 gnd1 l2 22 nh l3 22 nh 7 c4 1 nf c5 1 nf c10 c11 10 pf 10 pf c7 8.2 pf c6 5 to 20 pf 8.2 pf c8 c9 8.2 pf l4 150 nh l5 150 nh gnd2 89 crystal oscillator frequency multiplier battery low indicator v p v p 28 v ref bli do re decoder 27 26 25 ts 13 to 50 pf c18 1 nf r5 1.8 k w l9 560 nh c16 xtal c17 15 pf 16 15 17 18 c14 1 nf v p r2 47 k w c12 5 to 20 pf l7 33 nh l6 33 nh r3 1.5 k w v p c13 10 f 19 20 tdc 21 c15 27 pf l8 27 nh gnd3 22 23 24 r 4 2.2 k w c 19 1 nf uaa2080t uaa2080u mixer i mixer q r7 100 w v i(rf) fig.2 block, test and application diagram drawn for so28 and naked die; f i(rf) = 172.941 mhz.
1996 jan 15 6 philips semiconductors product speci?cation advanced pager receiver uaa2080 table 1 tolerances of components shown in figs 1 and 2 (notes 1 and 2) notes 1. recommended crystal: f xtal = 57.647 mhz (crystal with 8 pf load), 3rd overtone, pullability > 2.75 10 - 6 /pf (change in frequency between series resonance and resonance with 8 pf series capacitor at 25 c), dynamic resistance r1 < 40 w , d f= 5 10 - 6 for t amb = - 10 to +55 c with 25 c reference, calibration plus aging tolerance: - 5 10 - 6 to +15 10 - 6 . 2. this crystal recommendation is based on economic aspects and practical experience. normally the spreads for r1, pullability and calibration do not show their worst case limits simultaneously in one crystal. in such a rare event, the tuning range will be reduced to an insufficient level. component tolerance (%) remark inductances l1 5q min = 100 at 173 mhz l2, l3, l6, l7 20 q min = 50 at 173 mhz; tc = (+25 to +125) 10 - 6 /k l4, l5 10 q min = 30 at 173 mhz; tc = (+25 to +125) 10 - 6 /k l8 20 q min = 30 at 173 mhz; tc = (+25 to +125) 10 - 6 /k l9 10 q min = 30 at 57 mhz; tc = (+25 to +125) 10 - 6 /k resistors r1 to r7 2 tc = +50 10 - 6 /k capacitors c1, c2, c7, c8, c9, c15 5tc=(0 30) 10 - 6 /k; tan d 30 10 - 4 at 1 mhz c3, c6, c12 - tc = (- 750 300) 10 - 6 /k; tan d 50 10 - 4 at 1 mhz c4, c5, c14, c18, c19 10 tc = (0 30) 10 - 6 /k; tan d 10 10 - 4 at 1 mhz c10, c11 5tc=(0 30) 10 - 6 /k; tan d 21 10 - 4 at 1 mhz c13 20 c16 - tc = (- 1700 500) 10 - 6 /k; tan d 50 10 - 4 at 1 mhz c17 5tc=(0 30) 10 - 6 /k; tan d 26 10 - 4 at 1 mhz
1996 jan 15 7 philips semiconductors product speci?cation advanced pager receiver uaa2080 block and test diagrams (470 mhz) handbook, full pagewidth mlc702 active filter gyrator filter active filter gyrator filter low noise amplifier q low noise amplifier i 15 16 18 19 rf pre-amplifier 11 r1 10 8 c3 2.5 to 6 pf l1 12.5 nh c2 2.7 pf c1 2.7 pf band gap reference if testpoints tpi tpq 5 6 7 gnd1 l3 8 nh l2 8 nh 12 c4 1 nf c5 1 nf c10 22 pf c11 22 pf c7 2.7 pf c6 2.5 to 6 pf c8 2.7 pf c9 2.7 pf l4 40 nh l5 40 nh 13 14 crystal oscillator frequency multiplier v ref bli re to decoder 3 2 1 ts c18 1 nf r5 1.8 k w l9 560 nh c16 13 to 50 pf xtal c17 15 pf c14 1 nf v p v p c13 10 m f 26 27 tdc 28 c15 3 to 10 pf l8 100 nh gnd3 30 31 32 r4 1.2 k w c19 1 nf uaa2080h 24 25 c12 2.5 to 6 pf l7 8 nh l6 8 nh r3 820 w r2 47 k w 22 21 20 gnd2 battery low indicator limiter q demo- dulator limiter i do mixer i mixer q v p 4 330 w v i(rf) v p fig.3 block, test and application diagram drawn for lqfp32; f i(rf) = 469.95 mhz. pins 9, 17, 23 and 29 are not connected.
1996 jan 15 8 philips semiconductors product speci?cation advanced pager receiver uaa2080 handbook, full pagewidth mlc703 active filter gyrator filter active filter gyrator filter low noise amplifier q low noise amplifier i 10 11 12 13 14 limiter q demodulator limiter i rf pre-amplifier 6 330 w r1 5 4 c3 2.5 to 6 pf l1 12.5 nh c2 2.7 pf c1 2.7 pf band gap reference if testpoints tpi tpq 12 3 gnd1 l2 8 nh l3 8 nh 7 c4 1 nf c5 1 nf c10 c11 22 pf 22 pf c7 2.7 pf c6 2.5 to 6 pf 2.7 pf c8 c9 2.7 pf l4 40 nh l5 40 nh gnd2 89 crystal oscillator frequency multiplier battery low indicator v p v p 28 v ref bli do re decoder 27 26 25 ts 13 to 50 pf c18 1 nf r5 1.8 k w l9 560 nh c16 xtal c17 15 pf 16 15 17 18 c14 1 nf v p r2 47 k w c12 2.5 to 6 pf l7 8 nh l6 8 nh r3 820 w v p c13 10 f 19 20 tdc 21 c15 3 to 10 pf l8 100 nh gnd3 22 23 24 r 4 1.2 k w c 19 1 nf uaa2080t uaa2080u mixer i mixer q v i(rf) fig.4 block, test and application diagram drawn for so28 and naked die; f i(rf) = 469.95 mhz.
1996 jan 15 9 philips semiconductors product speci?cation advanced pager receiver uaa2080 handbook, full pagewidth mlc704 active filter gyrator filter active filter gyrator filter low noise amplifier q low noise amplifier i 15 16 18 19 rf pre-amplifier 11 10 8 v i(rf) band gap reference if testpoints tpi tpq 5 6 7 gnd1 12 c10 22 pf c11 22 pf c21 5.6 pf c5 1 nf c23 2.5 to 6 pf c22 5.6 pf l10 12.5 nh l4 40 nh l5 40 nh 13 14 crystal oscillator frequency multiplier v ref bli re to decoder 3 2 1 ts c18 1 nf r5 1.8 k w l9 560 nh c16 13 to 50 pf xtal c17 15 pf c14 1 nf v p v p c13 10 m f 26 27 tdc 28 c15 3 to 10 pf l8 100 nh gnd3 30 31 32 r4 1.2 k w c19 1 nf uaa2080h 24 25 c12 2.5 to 6 pf l7 8 nh l6 8 nh r3 820 w r2 47 k w 22 21 20 gnd2 battery low indicator limiter q demo- dulator limiter i do mixer i mixer q v p 4 v p fig.5 mixer input sensitivity test circuit; f i(rf) = 469.95 mhz.
1996 jan 15 10 philips semiconductors product speci?cation advanced pager receiver uaa2080 table 2 tolerances of components shown in figs 3, 4 and 5 (notes 1 and 2) notes 1. recommended crystal: f xtal = 78.325 mhz (crystal with 8 pf load), 3rd overtone, pullability > 2.75 10 - 6 /pf (change in frequency between series resonance and resonance with 8 pf capacitor at 25 c), dynamic resistance r1 < 30 w , d f= 5 10 - 6 for t amb = - 10 to +55 c with 25 c reference, calibration plus aging tolerance: - 5 10 - 6 to +15 10 - 6 . 2. this crystal recommendation is based on economic aspects and practical experience. normally the spreads for r1, pullability and calibration do not show their worst case limits simultaneously in one crystal. in such a rare event, the tuning range will be reduced to an insufficient level. component tolerance (%) remark inductances l1, l10 5q min = 145 at 470 mhz l2, l3, l6, l7 20 q min = 50 at 470 mhz; tc = (+25 to +125) 10 - 6 /k l4, l5 10 q min = 40 at 470 mhz; tc = (+25 to +125) 10 - 6 /k l8 10 q min = 30 at 156 mhz; tc = (+25 to +125) 10 - 6 /k l9 10 q min = 40 at 78 mhz; tc = (+25 to +125) 10 - 6 /k resistors r1 to r5 2 tc = +50 10 - 6 /k capacitors c1, c2, c7, c8, c9 5tc=(0 30) 10 - 6 /k; tan d 30 10 - 4 at 1 mhz c3, c6, c12, c23 - tc = (- 750 300) 10 - 6 /k; tan d 50 10 - 4 at 1 mhz c4, c5, c14, c18 to c22 10 tc = (0 30) 10 - 6 /k; tan d 10 10 - 4 at 1 mhz c10, c11 5tc=(0 30) 10 - 6 /k; tan d 21 10 - 4 at 1 mhz c13 20 c16 - tc = ( - 1700 500) 10 - 6 /k; tan d 50 10 - 4 at 1 mhz c17 5tc=(0 30) 10 - 6 /k; tan d 26 10 - 4 at 1 mhz
1996 jan 15 11 philips semiconductors product speci?cation advanced pager receiver uaa2080 block and test diagram (930 mhz) handbook, full pagewidth mlc705 active filter gyrator filter active filter gyrator filter low noise amplifier q low noise amplifier i 15 16 18 19 rf pre-amplifier 11 r1 10 8 c3 1.7 to 3 pf l1 5 nh c2 1.0 pf c1 1.2 pf band gap reference if testpoints tpi tpq 5 6 7 gnd1 l3 3.5 nh l2 3.5 nh 12 c4 150 pf c5 150 pf l10 5 nh l11 5 nh c7 1.5 pf c6 1.7 to 3 pf c8 1.5 pf c9 1.2 pf l4 12.5 nh l5 12.5 nh 13 14 crystal oscillator frequency multiplier v i(osc) v ref bli re to decoder 3 2 1 ts c14 150 pf v p v p c13 4.7 m f 26 27 tdc 28 3.3 pf c15 l8 33 nh gnd3 30 31 32 r4 390 w c19 150 pf uaa2080h 24 25 c12 1.7 to 3 pf l7 3 nh l6 3 nh r3 330 w r2 47 k w 22 21 20 gnd2 battery low indicator limiter q demo- dulator limiter i do mixer i mixer q v p 4 120 w v i(rf) v p fig.6 test circuit; f i(rf) = 930.50 mhz. pins 9, 17, 23 and 29 are not connected.
1996 jan 15 12 philips semiconductors product speci?cation advanced pager receiver uaa2080 table 3 tolerances of components shown in fig.6 (note 1) note 1. the external oscillator signal v i(osc) has a frequency of f osc = 310.1667 mhz. component tolerance (%) remark inductances l1 10 q typ = 150 at 930 mhz l2, l3, l6, l7 - microstrip inductor l4, l5 5q typ = 100 at 930 mhz l8 10 q typ = 65 at 310 mhz l10, l11 10 q typ = 150 at 930 mhz resistors r1 to r4 2tc=(0 200) 10 - 6 /k; capacitors c1, c2, c7, c8, c9, c15 5tc=(0 30) 10 - 6 /k; tan d 30 10 - 4 at 1 mhz c3, c6, c12 - tc = (0 200) 10 - 6 /k; tan d 30 10 - 4 at 1 mhz c4, c5, c14, c19 10 tc = (0 30) 10 - 6 /k; tan d 10 10 - 4 at 1 mhz c13 20
1996 jan 15 13 philips semiconductors product speci?cation advanced pager receiver uaa2080 pinning (lqfp32) symbol pin description ts 1 test switch; connection to ground for normal operation bli 2 battery low indicator output do 3 data output re 4 receiver enable input tpi 5 if test point; i channel tpq 6 if test point; q channel vi1rf 7 pre-ampli?er rf input 1 vi2rf 8 pre-ampli?er rf input 2 n.c. 9 not connected rrfa 10 external emitter resistor for pre-ampli?er gnd1 11 ground 1 (0 v) vo2rf 12 pre-ampli?er rf output 2 vo1rf 13 pre-ampli?er rf output 1 v p 14 supply voltage vi2mi 15 i channel mixer input 2 vi1mi 16 i channel mixer input 1 n.c. 17 not connected vi1mq 18 q channel mixer input 1 vi2mq 19 q channel mixer input 2 gnd2 20 ground 2 (0 v) com 21 gyrator ?lter resistor; common line rgyr 22 gyrator ?lter resistor n.c. 23 not connected vo1mul 24 frequency multiplier output 1 vo2mul 25 frequency multiplier output 2 rmul 26 external emitter resistor for frequency multiplier tdc 27 dc test point; no external connection for normal operation osc 28 oscillator collector n.c. 29 not connected gnd3 30 ground 3 (0 v) osb 31 oscillator base; crystal input ose 32 oscillator emitter fig.7 pin configuration; lqfp32. handbook, halfpage 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 ts bli do re tpi tpq vi1rf vi2rf n.c. rrfa gnd1 vo2rf vo1rf v p vi2mi vi1mi vo1mul n.c. rgyr com gnd2 vi2mq vi1mq ose osb gnd3 n.c. osc tdc rmul vo2mul n.c. uaa2080h mlc706
1996 jan 15 14 philips semiconductors product speci?cation advanced pager receiver uaa2080 pinning (so28) symbol pin description tpi 1 if test point; i channel tpq 2 if test point; q channel vi1rf 3 pre-ampli?er rf input 1 vi2rf 4 pre-ampli?er rf input 2 rrfa 5 external emitter resistor for pre-ampli?er gnd1 6 ground 1 (0 v) vo2rf 7 pre-ampli?er rf output 2 vo1rf 8 pre-ampli?er rf output 1 v p 9 supply voltage vi2mi 10 i channel mixer input 2 vi1mi 11 i channel mixer input 1 vi1mq 12 q channel mixer input 1 vi2mq 13 q channel mixer input 2 gnd2 14 ground 2 (0 v) com 15 gyrator ?lter resistor; common line rgyr 16 gyrator ?lter resistor vo1mul 17 frequency multiplier output 1 vo2mul 18 frequency multiplier output 2 rmul 19 external emitter resistor for frequency multiplier tdc 20 dc test point; no external connection for normal operation osc 21 oscillator collector gnd3 22 ground 3 (0 v) osb 23 oscillator base; crystal input ose 24 oscillator emitter ts 25 test switch; connection to ground for normal operation bli 26 battery low indicator output do 27 data output re 28 receiver enable input fig.8 pin configuration; so28. 1 2 3 4 5 6 7 8 9 10 11 12 13 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 uaa2080t tpi tpq vi1rf vi2rf rrfa gnd1 vo2rf vo1rf v p vi2mi vi1mi vi1mq vi2mq gnd2 re do bli ts ose osb gnd3 osc tdc rmul vo2mul vo1mul rgyr com mbb972
1996 jan 15 15 philips semiconductors product speci?cation advanced pager receiver uaa2080 chip dimensions and bonding pad locations see table 4 for bonding pad description and locations for x/y co-ordinates. fig.9 bonding pad locations. chip area: 18.15 mm 2 . chip thickness: 380 20 m m. drawing not to scale. handbook, full pagewidth mlc707 28 1 2 3 4 5 6 7 8 9 10 11 uaa2080u 3.83 mm 4.74 mm 0 0 y x 24 23 22 21 20 19 18 17 16 15 14 13 12 27 26 25 where: m pad number 1 (diameter 124 m) pad not used pad 124 m x 124 m m m pad 100 m x 100 m m m pad 100 m x 100 m with reference point m m
1996 jan 15 16 philips semiconductors product speci?cation advanced pager receiver uaa2080 table 4 bonding pad centre locations (dimensions in m m) note 1. all x/y co-ordinates are referenced to the centre of pad 4 (vi2rf); see fig.9. symbol pad description x y tpi 1 if test point; i channel - 32 1296 tpq 2 if test point; q channel - 32 1000 vi1rf 3 pre-ampli?er rf input 1 - 32 360 vi2rf 4 pre-ampli?er rf input 2; note 1 0 0 rrfa 5 external emitter resistor for pre-ampli?er 472 0 gnd1 6 ground 1 (0 v) 1160 0 vo2rf 7 pre-ampli?er rf output 2 1 688 0 vo1rf 8 pre-ampli?er rf output 1 2 232 0 v p 9 supply voltage 2 760 0 vi2mi 10 i channel mixer input 2 3 608 0 vi1mi 11 i channel mixer input 1 4 216 0 vi1mq 12 q channel mixer input 1 4 216 360 vi2mq 13 q channel mixer input 2 4 216 960 gnd2 14 ground 2 (0 v) 4 216 1360 com 15 gyrator ?lter resistor; common line 4 216 2024 rgyr 16 gyrator ?lter resistor 4216 2496 vo1mul 17 frequency multiplier output 1 4216 3136 vo2mul 18 frequency multiplier output 2 4176 3456 rmul 19 external emitter resistor for frequency multiplier 3668 3458 tdc 20 dc test point; no external connection for normal operation 2952 3456 osc 21 oscillator collector 2312 3456 gnd3 22 ground 3 (0 v) 1832 3456 osb 23 oscillator base; crystal input 1328 3456 ose 24 oscillator emitter 432 3456 ts 25 test switch; connection to ground for normal operation - 32 3456 bli 26 battery low indicator output - 32 3136 do 27 data output - 32 2512 re 28 receiver enable input - 32 2152 lower left corner of chip (typical values) - 278 - 186
1996 jan 15 17 philips semiconductors product speci?cation advanced pager receiver uaa2080 internal circuits fig.10 internal circuits drawn for lqfp32. handbook, full pagewidth mga788 8 7 uaa2080h 6 5 1 k w 1 k w 4 150 k w 3 5 k w 5 k w 2 1 13 12 11 10 150 w 9 n.c. v p 16 15 v p 14 32 31 30 28 27 26 25 24 v p v p 8.15 k w n.c. 29 19 18 17 n.c. 20 22 21 v p 23 n.c.
1996 jan 15 18 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.11 internal circuits drawn for so28 and naked die. handbook, full pagewidth mbb974 - 1 27 28 26 25 24 23 22 21 20 19 18 17 16 15 v p v p v p v p 14 13 12 11 10 9 8 7 6 5 4 3 2 1 uaa2080t uaa2080u 150 k w 5 k w 5 k w 1 k w 1 k w 8.15 k w v p 150 w
1996 jan 15 19 philips semiconductors product speci?cation advanced pager receiver uaa2080 functional description the complete circuit consists of the following functional blocks as shown in figs 1 to 6. radio frequency ampli?er the rf amplifier is an emitter-coupled pair driving a balanced cascode stage, which drives an external balanced tuned circuit. its bias current is set by an external 300 w resistor r1 to typically 770 m a. with this bias current the optimum source resistance is 1.3 k w at vhf and 1.0 k w at uhf. at 930 mhz a higher bias current is required to achieve optimum gain. a value of 120 w is used for r1, which corresponds with a bias current of approximately 1.3 ma and an optimum source resistance of approximately 600 w .the capacitors c1 and c2 transform a 50 w source resistance to this optimum value. the output drives a tuned circuit with capacitive divider (c7, c8 and c9) to provide maximum power transfer to the phase-splitting network and the mixers. mixers the double balanced mixers consist of common base input stages and upper switching stages driven from the frequency multiplier. the 300 w input impedance of each mixer acts together with external components (c10, c11; l4, l5 respectively) as phase shifter/power splitter to provide a differential phase shift of 90 degrees between the i channel and the q channel. at 930 mhz all external phase shifter components are inductive (l10, l11; l4, l5). oscillator the oscillator is based on a transistor in common collector configuration. it is followed by a cascode stage driving a tuned circuit which provides the signal for the frequency multiplier. the oscillator bias current (typically 250 m a) is determined by the 1.8 k w external resistor r5. the oscillator frequency is controlled by an external 3rd overtone crystal in parallel resonance mode. external capacitors between base and emitter (c17) and from emitter to ground (c16) make the oscillator transistor appear as having a negative resistance for small signals; this causes the oscillator to start. inductance l9 connected in parallel with capacitor c16 to the emitter of the oscillator transistor prevents oscillation at the fundamental frequency of the crystal. the resonant circuit at output pin osc selects the second harmonic of the oscillator frequency. in other applications a different multiplication factor may be chosen. at 930 mhz an external oscillator circuit is required to provide sufficient local oscillator signal for the frequency multiplier. frequency multiplier the frequency multiplier is an emitter-coupled pair driving an external balanced tuned circuit. its bias current is set by external resistor r4 to typically 190 m a (173 mhz), 350 m a (470 mhz) and 1 ma (930 mhz). the oscillator signal is internally ac coupled to one input of the emitter-coupled pair while the other input is internally grounded via a capacitor. the frequency multiplier output signal between pins vo1mul and vo2mul drives the upper switching stages of the mixers. the bias voltage on pins vo1mul and vo2mul is set by external resistor r3 to allow sufficient voltage swing at the mixer outputs. the value of r3 depends on the operating frequency: 1.5 k w (173 mhz), 820 w (470 mhz) and 330 w (930 mhz). low noise ampli?ers, active ?lters and gyrator ?lters the low noise amplifiers ensure that the noise of the following stages does not affect the overall noise figure. the following active filters before the gyrator filters reduce the levels of large signals from adjacent channels. internal ac couplings block dc offsets from the gyrator filter inputs. the gyrator filters implement the transfer function of a 7th order elliptic filter. their cut-off frequencies are determined by the 47 k w external resistor r2 between pins rgyr and com. the gyrator filter output signals are available on if test pins tpi and tpq. limiters the gyrator filter output signals are amplified in the limiter amplifiers to obtain if signals with removed amplitude information. demodulator the limiter amplifier output signals are fed to the demodulator. the demodulator output do is going low or high depending upon which of the input signals has a phase lead.
1996 jan 15 20 philips semiconductors product speci?cation advanced pager receiver uaa2080 battery low indicator the battery low indicator senses the supply voltage and sets its output high when the supply voltage is less than v th (typically 2.05 v). low battery warning is available at bli. band gap reference the whole chip can be powered-up and powered-down by enabling and disabling the band gap reference via the receiver enable pin re. limiting values in accordance with the absolute maximum rating system (iec 134). ground pins gnd1, gnd2 and gnd3 connected together. note 1. equivalent to discharging a 100 pf capacitor via a 1.5 k w resistor. symbol parameter min. max. unit v p supply voltage - 0.3 +8.0 v v es electrostatic handling (note 1) pins vi1rf and vi2rf - 1500 +2000 v pin rrfa - 500 +2000 v pins vo1rf and vo2rf - 2000 +250 v pins v p and osb - 500 +500 v pins osc and ose - 2000 +500 v other pins - 2000 +2000 v t stg storage temperature - 55 +125 c t amb operating ambient temperature - 10 +70 c
1996 jan 15 21 philips semiconductors product speci?cation advanced pager receiver uaa2080 dc characteristics v p = 2.05 v; t amb = - 10 to +70 c (typical values at t amb =25 c); measurements taken in test circuit figs 1, 2, 3 or 4 with crystal at pin osb disconnected; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supply v p supply voltage 1.9 2.05 3.5 v i p supply current v re = high; f i(rf) = 173 and 470 mhz 2.3 2.7 3.2 ma v re = high; f i(rf) = 930 mhz 2.9 3.4 3.9 ma i p(off) stand-by current v re = low -- 3 m a receiver enable input (pin re) v ih high level input voltage 1.4 - v p v v il low level input voltage 0 - 0.3 v i ih high level input current v ih =v p = 3.5 v -- 20 m a v il low level input current v il =0v 0 -- 1.0 m a battery low indicator output (pin bli) v oh high level output voltage v p < v th ; i bli = - 10 m av p - 0.5 -- v v ol low level output voltage v p > v th ; i bli = +10 m a -- 0.5 v v th voltage threshold for battery low indicator 1.95 2.05 2.15 v demodulator output (pin do) v oh high level output voltage i do = - 10 m av p - 0.5 -- v v ol low level output voltage i do = +10 m a -- 0.5 v
1996 jan 15 22 philips semiconductors product speci?cation advanced pager receiver uaa2080 ac characteristics (173 mhz) v p = 2.05 v; t amb =25 c; test circuit figs 1 or 2; f i(rf) = 172.941 mhz with 4.0 khz deviation; 1200 baud pseudo random bit sequence modulation (t r = 250 25 m s measured between 10% and 90% of voltage amplitude) and 20 khz channel spacing; unless otherwise speci?ed. notes 1. the bit error rate ber is measured using the test facility shown in fig.13. note that the ber test facility contains a digital input filter equivalent to the one used in the pca5000a, pcf5001 and pcd5003 pocsag decoders. 2. capacitor c16 requires re-adjustment to compensate temperature drift. 3. d f is the frequency offset between the required signal and the interfering signal. 4. turn-on time is defined as the time from pin re going high to the reception of valid data on output pin do. turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). symbol parameter conditions min. typ. max. unit radio frequency input p i(ref) input sensitivity (p i(ref) is the maximum available power at the rf input of the test board) ber 3 100 ; note 1 -- 126.5 - 123.5 dbm t amb = - 10 to +70 c; note 2 --- 120.5 dbm v p = 1.9 v --- 117.5 dbm mixers to demodulator a acs adjacent channel selectivity t amb =25 c6972 - db t amb = - 10 to +70 c67 -- db a ci if ?lter channel imbalance -- 2db a c co-channel rejection - 47db a sp spurious immunity 50 60 - db a im intermodulation immunity 55 60 - db a bl blocking immunity d f > 1 mhz; note 3 78 85 - db f offset frequency offset range (3 db degradation in sensitivity) deviation f = 4.0 khz 2.0 -- khz deviation f = 4.5 khz 2.5 -- khz d f dev deviation range (3 db degradation in sensitivity) 2.5 - 7.0 khz t on receiver turn-on time data valid after setting re input high; note 4 -- 5ms
1996 jan 15 23 philips semiconductors product speci?cation advanced pager receiver uaa2080 ac characteristics (470 mhz) v p = 2.05 v; t amb =25 c; test circuit figs 3 or 4; f i(rf) = 469.950 mhz with 4.0 khz deviation; 1200 baud pseudo random bit sequence modulation (t r = 250 25 m s measured between 10% and 90% of voltage amplitude) and 20 khz channel spacing; unless otherwise speci?ed. notes 1. the bit error rate ber is measured using the test facility shown in fig.13. note that the ber test facility contains a digital input filter equivalent to the one used in the pca5000a, pcf5001 and pcd5003 pocsag decoders. 2. capacitor c16 requires re-adjustment to compensate temperature drift. 3. test circuit fig.5. p i(mix) is the maximum available power at the input of the test board. the bit error rate ber is measured using the test facility shown in fig.13. 4. d f is the frequency offset between the required signal and the interfering signal. 5. turn-on time is defined as the time from pin re going high to the reception of valid data on output pin do. turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). symbol parameter conditions min. typ. max. unit radio frequency input p i(ref) input sensitivity (p i(ref) is the maximum available power at the rf input of the test board) ber 3 100 ; note 1 -- 124.5 - 121.5 dbm t amb = - 10 to +70 c; note 2 --- 118.5 dbm v p = 1.9 v --- 115.5 dbm mixer input p i(mix) input sensitivity ber 3 100 ; note 3 -- 115.0 - 110.0 dbm mixers to demodulator a acs adjacent channel selectivity t amb =25 c6770 - db t amb = - 10 to +70 c65 -- db a ci if ?lter channel imbalance -- 2db a c co-channel rejection - 47db a sp spurious immunity 50 60 - db a im intermodulation immunity 55 60 - db a bl blocking immunity d f > 1 mhz; note 4 75 82 - db f offset frequency offset range (3 db degradation in sensitivity) deviation f = 4.0 khz 2.0 -- khz deviation f = 4.5 khz 2.5 -- khz d f dev deviation range (3 db degradation in sensitivity) 2.5 - 7.0 khz t on receiver turn-on time data valid after setting re input high; note 5 -- 5ms
1996 jan 15 24 philips semiconductors product speci?cation advanced pager receiver uaa2080 ac characteristics (930 mhz) v p = 2.05 v; t amb =25 c; test circuit fig.6 (note 1); f i(rf) = 930.500 mhz with 4.0 khz deviation; 1200 baud pseudo random bit sequence modulation (t r = 250 25 m s measured between 10% and 90% of voltage amplitude) and 20 khz channel spacing; unless otherwise speci?ed. notes 1. the external oscillator signal v i(osc) has a frequency of f osc = 310.1667 mhz and a level of - 15 dbm. 2. the bit error rate ber is measured using the test facility shown in fig.13. note that the ber test facility contains a digital input filter equivalent to the one used in the pca5000a, pcf5001 and pcd5003 pocsag decoders. 3. d f is the frequency offset between the required signal and the interfering signal. 4. turn-on time is defined as the time from pin re going high to the reception of valid data on output pin do. turn-on time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the oscillator circuitry). symbol parameter conditions min. typ. max. unit radio frequency input p i(ref) input sensitivity (p i(ref) is the maximum available power at the rf input of the test board) ber 3 100 ; note 2 -- 120.0 - 114.0 dbm v p = 1.9 v --- 108.0 dbm mixers to demodulator a acs adjacent channel selectivity t amb =25 c6069 - db a c co-channel rejection - 510db a sp spurious immunity 40 60 - db a im intermodulation immunity 53 60 - db a bl blocking immunity d f > 1 mhz; note 3 65 74 - db f offset frequency offset range (3 db degradation in sensitivity) deviation f = 4.0 khz 2.0 -- khz deviation f = 4.5 khz 2.5 -- khz d f dev deviation range (3 db degradation in sensitivity) 2.5 - 7.0 khz t on receiver turn-on time data valid after setting re input high; note 4 -- 5ms
1996 jan 15 25 philips semiconductors product speci?cation advanced pager receiver uaa2080 test information tuning procedure for ac tests 1. turn on the signal generator: f gen =f i(rf) + 4 khz, no modulation, v i(rf) = 1 mv (rms). 2. measure the if with a counter connected to test pin tpi. tune c16 to set the crystal oscillator to achieve f if = 4 khz change the generator frequency to f gen =f i(rf) - 4 khz and check that f if is also 4 khz. for a received input frequency f i(rf) = 172.941 mhz the crystal frequency is f xtal = 57.647 mhz, while for f i(rf) = 469.950 mhz the crystal frequency is f xtal = 78.325 mhz. for a received input frequency f i(rf) = 930.500 mhz an external oscillator signal must be used with f i(osc) = 310.1667 mhz and a level of - 15 dbm (for definition of crystal frequency, see table 1). 3. set the signal generator to nominal frequency (f i(rf) ) and turn on the modulation deviation 4.0 khz, 600 hz square wave modulation, v i(rf) = 1 mv (rms). note that the rf signal should be reduced in the following tests, as the receiver is tuned, to ensure v o(if) = 10 to 50 mv (p-p) on test pins tpi or tpq. 4. tune c15 (oscillator output circuit) and c12 (frequency multiplier output) to obtain a peak audio voltage on pin tpi. 5. tune c3 and c6 (rf input and mixer input) to obtain a peak audio voltage on pin tpi. when testing the mixer input sensitivity tune c23 instead of c3 and c6 (test circuit fig.5). 6. check that the output signal on pin tpq is within 3 db in amplitude and at 90 ( 20 ) relative phase of the signal on pin tpi. 7. check that data signal appears on output pin do and proceed with the ac test. ac test conditions table 5 de?nitions for ac test conditions (see table 6) signal description modulated test signal 1 frequency 172.941, 469.950 or 930.500 mhz deviation 4.0 khz modulation 1200 baud pseudo random bit sequence rise time 250 25 m s (between 10% and 90% of final value) modulated test signal 2 deviation 2.4 khz modulation 400 hz sinewave other de?nitions f 1 frequency of signal generator 1 f 2 frequency of signal generator 2 f 3 frequency of signal generator 3 d f cs channel spacing (20 khz) p 1 maximum available power from signal generator 1 at the test board input p 2 maximum available power from signal generator 2 at the test board input p 3 maximum available power from signal generator 3 at the test board input p i(ref) maximum available power at the test board input to give a bit error rate (ber) 3 100 for the modulated test signal 1, in the absence of interfering signals and under the conditions as specified in chapters ac characteristics (173 mhz), ac characteristics (470 mhz) and ac characteristics (930 mhz)
1996 jan 15 26 philips semiconductors product speci?cation advanced pager receiver uaa2080 table 6 ac test conditions (notes 1 and 2) notes 1. the tests are executed without load on pins tpi and tpq. 2. all minimum and maximum values correspond to a bit error rate (ber) 3 100 in the wanted signal (p 1 ). 3. the ber measurement is started 5 ms (t on(max) ) after v re goes high; ber is then measured for 100 bits (ber 3 100 ). symbol parameter conditions test signals a a adjacent channel selectivity; fig.12(b) f 2 =f 1 d f cs generator 1: modulated test signal 1 p 1 =p i(ref) +3db generator 2: modulated test signal 2 p 2 =p 1 + a a(min) a c co-channel rejection; fig.12(b) f 2 =f 1 up to 3 khz generator 1: modulated test signal 1 p 1 =p i(ref) +3db generator 2: modulated test signal 2 p 2 =p 1 -a c(max) a sp spurious immunity; fig.12(b) f 2 = 100 khz to 2 ghz generator 1: modulated test signal 1 p 1 =p i(ref) +3db generator 2: modulated test signal 2 p 2 =p 1 + a sp( min) a im intermodulation immunity; fig.12(c) f 2 =f 1 d f cs ; f 3 =f 1 2 d f cs generator 1: modulated test signal 1 p 1 =p i(ref) +3db generator 2: unmodulated p 2 =p 1 + a im(min) generator 3: modulated test signal 2 p 3 =p 2 a bl blocking immunity; fig.12(b) f 2 =f 1 1 mhz generator 1: modulated test signal 1 p 1 =p i(ref) +3db generator 2: modulated test signal 2 p 2 =p 1 + a bl(min) f offset frequency offset range; fig.12(a) deviation = 4.0 khz, f 1 =f i(rf) 2 khz (f offset(min) ) generator 1: modulated test signal 1 p 1 =p i(ref) +3db d f dev deviation range; fig.12(a) deviation = 2.5 to 7 khz; ( d f dev(min) to d f dev(max) ) generator 1: modulated test signal 1 p 1 =p i(ref) +3db t on receiver turn-on time; fig.12(a) note 3 generator 1: modulated test signal 1 p 1 =p i(ref) +10db
1996 jan 15 27 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.12 test configurations. (a) one generator. (b) two generators. (c) three generators. (1) see fig.13. handbook, full pagewidth mlc708 generator 1 r = 50 w s generator 1 r = 50 w s generator 2 r = 50 w s generator 1 r = 50 w s generator 2 r = 50 w s generator 3 r = 50 w s 50 w 2-signal power combiner ber test (1) facility ber test (1) facility ber test (1) facility 50 w 3-signal power combiner device under test device under test device under test (a) (b) (c) fig.13 ber test facility. handbook, full pagewidth mlc233 generator r = 50 w s digital filter pseudo random sequence generator 250 m s rise time clock recovery preset delay data comparator master clock recovered clock retimed rx data to error counter device under test
1996 jan 15 28 philips semiconductors product speci?cation advanced pager receiver uaa2080 printed-circuit boards fig.14 pcb top view for lqfp32; test circuit figs 1 and 3. handbook, full pagewidth mbd562
1996 jan 15 29 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.15 pcb bottom view for lqfp32; test circuit figs 1 and 3. handbook, full pagewidth mbd561
1996 jan 15 30 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.16 pcb top view with components for lqfp32; test circuit fig.3. v ee = gnd; v c =v p . handbook, full pagewidth mlc709 ts bli do re c13 do tpi tpq virf r5 c18 c17 l9 c16 l8 c15 c14 uaa2080h r1 c6 l2 l3 c4 c10 c11 c9 c7 c8 l5 l4 c19 r3 r2 l6 l7 c12 gnd v xtal p
1996 jan 15 31 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.17 pcb bottom view with components for lqfp32; test circuit fig.3. handbook, full pagewidth mlc235 c5 c1 c3 c2 l1 r4
1996 jan 15 32 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.18 pcb top view for so28; test circuit figs 2 and 4. handbook, full pagewidth mbd565
1996 jan 15 33 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.19 pcb bottom view for so28; test circuit figs 2 and 4. handbook, full pagewidth mbd567
1996 jan 15 34 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.20 pcb top view with components for so28; test circuit fig.4. v ee = gnd; v cc =v p ; bi = bli; ops = ts. handbook, full pagewidth mbd566 gnd c13 gnd v p v p ops bi do re data out r5 c18 c17 c16 c15 c12 l8 l7 c19 xl1 r3 c14 l6 r2 uaa2080t c11 l4 l5 c9 c10 c7 c8 c4 l3 l2 rf in tpq tpi
1996 jan 15 35 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.21 pcb bottom view with components for so28; test circuit fig.4. handbook, full pagewidth mbd568 r4 short c5 r1 c3 l1 c2 c1
1996 jan 15 36 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.22 pcb top view with components for lqfp32; test circuit fig.5. handbook, full pagewidth mlc710 ts bli do re gnd v c13 do tpi tpq r5 c18 c17 l9 c16 xtal l8 c15 c14 uaa2080h v i(rf) c11 c10 c22 c21 l5 l4 c19 r3 r2 l6 l10 l7 c12 c23 p
1996 jan 15 37 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.23 pcb bottom view with components for lqfp32; test circuit fig.5. handbook, full pagewidth mlc237 c5 r4
1996 jan 15 38 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.24 pcb top view with components for lqfp32; test circuit fig.6. o k, full pagewidth v i(rf) mlc711 l10 gnd v c13 r3 c19 l6 l7 c12 l8 c14 c15 v i(osc) ts bli do re tpi tpq c1 c2 c3 l1 r1 c6 l2 l3 c4 c8 uaa2080h c7 l11 c9 l4 l5 r2 p
1996 jan 15 39 philips semiconductors product speci?cation advanced pager receiver uaa2080 fig.25 pcb bottom view with components for lqfp32; test circuit fig.6. handbook, full pagewidth mlc239 r4 c5
1996 jan 15 40 philips semiconductors product speci?cation advanced pager receiver uaa2080 package outlines unit a max. a 1 a 2 a 3 b p ce (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 1.60 0.20 0.05 1.45 1.35 0.25 0.4 0.3 0.18 0.12 7.1 6.9 0.8 9.15 8.85 0.69 0.59 0.9 0.5 7 0 o o 0.25 0.1 1.0 0.2 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.75 0.45 sot358 -1 93-06-29 95-12-19 d (1) (1) (1) 7.1 6.9 h d 9.15 8.85 e z 0.9 0.5 d b p e q e a 1 a l p q detail x l (a ) 3 b 8 c d h b p e h a 2 v m b d z d a z e e v m a x 1 32 25 24 17 16 9 y pin 1 index w m w m 0 2.5 5 mm scale lqfp32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm sot358-1
1996 jan 15 41 philips semiconductors product speci?cation advanced pager receiver uaa2080 unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 18.1 17.7 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot136-1 x 14 28 w m q a a 1 a 2 b p d h e l p q detail x e z c l v m a e 15 1 (a ) 3 a y 0.25 075e06 ms-013ae pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.71 0.69 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale so28: plastic small outline package; 28 leads; body width 7.5 mm sot136-1 95-01-24 97-05-22
1996 jan 15 42 philips semiconductors product speci?cation advanced pager receiver uaa2080 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all lqfp and so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering lqfp wave soldering is not recommended for lqfp packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. if wave soldering cannot be avoided, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. even with these conditions, do not consider wave soldering lqfp packages lqfp48 (sot313-2), lqfp64 (sot314-2) or lqfp80 (sot315-1). so wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. m ethod (lqfp and so) during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1996 jan 15 43 philips semiconductors product speci?cation advanced pager receiver uaa2080 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
philips semiconductors C a worldwide company argentina: ierod, av. juramento 1992 - 14.b, (1428) buenos aires, tel. (541)786 7633, fax. (541)786 9367 australia: 34 waterloo road, north ryde, nsw 2113, tel. (02)805 4455, fax. (02)805 4466 austria: triester str. 64, a-1101 wien, p.o. box 213, tel. (01)60 101-1236, fax. (01)60 101-1211 belgium: postbus 90050, 5600 pb eindhoven, the netherlands, tel. (31)40-2783749, fax. (31)40-2788399 brazil: rua do rocio 220 - 5 th floor, suite 51, cep: 04552-903-s?o paulo-sp, brazil, p.o. box 7383 (01064-970), tel. (011)821-2333, fax. (011)829-1849 canada: philips semiconductors/components: tel. (800) 234-7381, fax. (708) 296-8556 chile: av. santa maria 0760, santiago, tel. (02)773 816, fax. (02)777 6730 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. (852)2319 7888, fax. (852)2319 7700 colombia: iprelenso ltda, carrera 21 no. 56-17, 77621 bogota, tel. (571)249 7624/(571)217 4609, fax. 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(0039)2 6752 2557 japan: philips bldg 13-37, kohnan 2 -chome, minato-ku, tokyo 108, tel. (03)3740 5130, fax. (03)3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. (02)709-1412, fax. (02)709-1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. (03)750 5214, fax. (03)757 4880 mexico: 5900 gateway east, suite 200, el paso, tx 79905, tel. 9-5(800)234-7381, fax. (708)296-8556 netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. (040)2783749, fax. (040)2788399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. (09)849-4160, fax. (09)849-7811 norway: box 1, manglerud 0612, oslo, tel. (022)74 8000, fax. (022)74 8341 pakistan: philips electrical industries of pakistan ltd., exchange bldg. st-2/a, block 9, kda scheme 5, clifton, karachi 75600, tel. (021)587 4641-49, fax. (021)577035/5874546 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. (63) 2 816 6380, fax. (63) 2 817 3474 portugal: philips portuguesa, s.a., rua dr. antnio loureiro borges 5, arquiparque - miraflores, apartado 300, 2795 linda-a-velha, tel. (01)4163160/4163333, fax. (01)4163174/4163366 singapore: lorong 1, toa payoh, singapore 1231, tel. (65)350 2000, fax. (65)251 6500 south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430, johannesburg 2000, tel. (011)470-5911, fax. (011)470-5494 spain: balmes 22, 08007 barcelona, tel. (03)301 6312, fax. (03)301 42 43 sweden: kottbygatan 7, akalla. s-164 85 stockholm, tel. (0)8-632 2000, fax. (0)8-632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. (01)488 2211, fax. (01)481 77 30 taiwan: philips taiwan ltd., 23-30f, 66, chung hsiao west road, sec. 1. taipeh, taiwan roc, p.o. box 22978, taipei 100, tel. (886) 2 382 4443, fax. (886) 2 382 4444 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, thailand, tel. (66) 2 745-4090, fax. (66) 2 398-0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. (0 212)279 27 70, fax. (0212)282 67 07 ukraine: philips ukraine, 2a akademika koroleva str., office 165, 252148 kiev, tel. 380-44-4760297, fax. 380-44-4766991 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. (0181)730-5000, fax. (0181)754-8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. (800)234-7381, fax. (708)296-8556 uruguay: coronel mora 433, montevideo, tel. (02)70-4044, fax. (02)92 0601 internet: http://www.semiconductors.philips.com/ps/ for all other countries apply to: philips semiconductors, international marketing and sales, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, telex 35000 phtcnl, fax. +31-40-2724825 scds47 ? philips electronics n.v. 1996 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. printed in the netherlands

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Price & Availability of UAA2080T-T

	To Download UAA2080T-T Datasheet File
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